When using a MOSFET or any type of field effect transistor for that matter as a solid-state switching device it is always advisable to select ones that have a very low R DS(on) value or at least mount them onto a suitable heatsink to help reduce any thermal runaway and damage. Power MOSFETs used as a switch generally have surge-current. The Transistors BJT & MOSFET are electronic semiconductor devices that give a large changing electrical o/p signal for small variations in small i/p signals. Due to this feature, these transistors are used as either a switch or an amplifier. The first transistor was released in the year 1950 and it can be treated as one of the most essential.
Details
IRF520 Transistor, Mosfet
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
MFR #: IRF520PBF
Mosfet Transistor Testing
Case Style: TO-220
Mfgr: Vishay Siliconix
Mosfet Transistor Symbol
NOTE: Replacement transistor used in Galaxy Model 98VHP
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- 175 °C Operating Temperature
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- Lead (Pb)-free Available
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| Manufacturer | Vishay Siliconix |
| Manufacturer Name | FUTURE ELECTRONICS CORP |
Difference Between Mosfet And Transistor
| IRF520 | 135.35 KB | Download |